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  1 MRF9030MR1 mrf9030mbr1 motorola rf device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for large?signal, common?source amplifier applications in 26 volt base station equipment. ? typical performance at 945 mhz, 26 volts output power ? 30 watts pep power gain ? 20 db efficiency ? 41% (two tones) imd ? ?31 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 30 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? moisture sensitivity level 3 ? dual?lead boltdown plastic package can also be used as surface mount. ? to?272 available in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. ? to?270 available in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs +15, ?0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 139 0.93 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 175 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model MRF9030MR1 mrf9030mbr1 c7 (minimum) c6 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.08 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf9030m/d semiconductor technical data 945 mhz, 30 w, 26 v lateral n?channel broadband rf power mosfets case 1337?01, style 1 (to?272 dual lead) plastic (mrf9030mbr1) case 1265?07, style 1 (to?270) plastic (MRF9030MR1) ? motorola, inc. 2002 rev 3
MRF9030MR1 mrf9030mbr1 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate ? source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 250 madc) v gs(q) 3 3.8 5 vdc drain ? source on ? voltage (v gs = 10 vdc, i d = 0.7 adc) v ds(on) ? 0.23 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 2.7 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 49 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 27 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.2 ? pf functional tests (in motorola test fixture) two ? tone common ? source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 18 20 ? db two ? tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 37 41 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ? 31 ? 28 dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ? 13 ? 9 db two ? tone common ? source amplifier power gain (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 20 ? db two ? tone drain efficiency (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 40.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ? 31 ? dbc input return loss (v dd = 26 vdc, p out = 30 w pep, i dq = 250 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? ? 12 ? db
3 MRF9030MR1 mrf9030mbr1 motorola rf device data figure 1. 930 ? 960 mhz broadband test circuit schematic z1 0.260 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.200 x 0.270 microstrip z5 0.330 x 0.270 microstrip z6 0.140 x 0.270 x 0.520 , taper z7 0.040 x 0.520 microstrip z8 0.090 x 0.520 microstrip z9 0.370 x 0.520 microstrip (MRF9030MR1) 0.290 x 0.520 microstrip (mrf9030mbr1) z10 0.130 x 0.520 microstrip (MRF9030MR1) 0.210 x 0.520 microstrip (mrf9030mbr1) z11 0.360 x 0.270 microstrip z12 0.050 x 0.270 microstrip z13 0.110 x 0.060 microstrip z14 0.220 x 0.060 microstrip z15 0.100 x 0.060 microstrip z16 0.870 x 0.060 microstrip z17 0.240 x 0.060 microstrip z18 0.340 x 0.060 microstrip board taconic rf ? 35 ? 0300, r = 3.5 table 1. 930 ? 960 mhz broadband test circuit component designations and values part description value, p/n or dwg manufacturer b1 short ferrite bead, surface mount 95f786 newark b2 long ferrite bead, surface mount 95f787 newark c1, c7, c14, c15 47 pf chip capacitors, b case 100b470jp 500x atc c2 0.6 ? 4.5 variable capacitor, gigatrim 44f3360 newark c3, c11 3.9 pf chip capacitors, b case 100b3r6bp 500x atc c4, c12 0.8 ? 8.0 variable capacitors, gigatrim 44f3360 newark c5, c6 6.8 pf chip capacitors, b case 100b7r5jp 500x atc c8, c16, c17 10 f, 35 v tantulum chip capacitors 93f2975 newark c9, c10 10 pf chip capacitors, b case 100b100jp 500x atc c13 1.8 pf chip capacitor, b case (MRF9030MR1) 0.6 ? 4.5 variable capacitor, gigatrim (mrf9030mbr1) 100b1r8bp 44f3360 atc newark c18 220 f electrolytic chip capacitor 14f185 newark l1, l2 12.5 nh coilcraft inductors a04t ? 5 coilcraft wb1, wb2 20 mil brass shim (0.250 x 0.250) rf ? design lab rf ? design lab pcb etched circuit board 900 mhz 250/viper rev 02 dselectronics
MRF9030MR1 mrf9030mbr1 4 motorola rf device data figure 2. 930 ? 960 mhz broadband test circuit component layout (MRF9030MR1) mrf9030m cut out area figure 3. 930 ? 960 mhz broadband test circuit component layout (mrf9030mbr1) 900 mhz cut out area rev 02
5 MRF9030MR1 mrf9030mbr1 motorola rf device data typical characteristics figure 4. class ab broadband circuit performance  figure 5. power gain versus output power figure 6. intermodulation distortion versus output power figure 7. intermodulation distortion products versus output power figure 8. power gain and efficiency versus output power
MRF9030MR1 mrf9030mbr1 6 motorola rf device data figure 9. power gain, efficiency and imd versus output power
7 MRF9030MR1 mrf9030mbr1 motorola rf device data f mhz z in ? z ol * ? 930 945 960 1.07 ? j0.160 1.17 ? j0.170 1.14 ? j0.385 3.53 + j0.20 3.41 + j0.24 3.60 + j0.17 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. figure 10. series equivalent input and output impedance (MRF9030MR1)      ?
MRF9030MR1 mrf9030mbr1 8 motorola rf device data f mhz z in ? z ol * ? 930 945 960 1.0 + j0.18 1.0 + j0.03 1.0 + j0.10 3.05 + j0.09 3.00 + j0.07 2.95 + j0.03 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. figure 11. series equivalent input and output impedance (mrf9030mbr1)      ?
9 MRF9030MR1 mrf9030mbr1 motorola rf device data notes
MRF9030MR1 mrf9030mbr1 10 motorola rf device data package dimensions case 1265 ? 07 issue f 
  bottom view a1 2x e d1 e4 e1 d2 e3 a2 exposed heatsink area a b d h pin one id ???? ???? ???? ???? ???? ???? ???? ???? ???? d 2x b1 2x d3 ? ? ? ? ? ? ? ? ? note 7 c1 f zone j e2 2x a                           pin 1 pin 2 pin 3 (to ? 270) plastic (MRF9030MR1)
11 MRF9030MR1 mrf9030mbr1 motorola rf device data case 1337 ? 01 issue o (to ? 272 dual lead) plastic h c a b      
  2x b1 a e1 r1 pin one id d d1 e pin one id y y                       1 view y ? y pin 3 a1 a2    ! 7 2x c1 2 (mrf9030mbr1)
MRF9030MR1 mrf9030mbr1 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ? typical ? parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including ? typicals ? must be validated for each customer application by customer ? s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & trademark office. all other product or service names are the property of t heir respective owners.  motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1 ? 303 ? 675 ? 2140 or 1 ? 800 ? 441 ? 2447 japan : motorola japan ltd.; sps, technical information center, 3 ? 20 ? 1, minami ? azabu. minato ? ku, tokyo 106 ? 8573 japan. 81 ? 3 ? 3440 ? 3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong ko ng. 852 ? 26668334 technical information center: 1 ? 800 ? 521 ? 6274 home page : http://www.motorola.com/semiconductors/ mrf9030m/d ?


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